SIHG44N65EF Datasheet, PDF (1/7 Pages) Vishay Siliconix – E Series Power MOSFET with Fast Body Diode

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SiHG44N65EF
Vishay Siliconix
E Series Power MOSFET with Fast Body Diode
PRODUCT SUMMARY
V_DS (V) at T_J max.
R_DS(on) typ. () at 25 °C
Q_g max. (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
700
V_GS = 10 V
278
46
76
Single
TO-247AC
0.063
D
S
D
G
G
S
N-Channel MOSFET
FEATURES
• Fast body diode MOSFET using E series
technology
• Reduced t_rr, Q_rr, and I_RRM
• Low figure-of-merit (FOM): R_on x Q_g
• Low input capacitance (C_iss)
• Low switching losses due to reduced Q_rr
• Ultra low gate charge (Q_g)
• Avalanche energy rated (UIS)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Telecommunications
- Server and telecom power supplies
• Lighting
- High intensity discharge (HID)
- Light emitting diodes (LEDs)
• Consumer and computing
- ATX power supplies
• Industrial
- Welding
- Battery chargers
• Renewable energy
- Solar (PV inverters)
• Switch mode power supplies (SMPS)
• Applications using the following topologies
- LLC
- Phase shifted bridge (ZVS)
- 3-level inverter
- AC/DC bridge
ORDERING INFORMATION
Package
Lead (Pb)-Free and Halogen-Free
TO-247AC
SiHG44N65EF-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current ^a
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy ^b
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Drain-Source Voltage Slope
Reverse Diode dV/dt ^d
T_J = 125 °C
E_AS
P_D
T_J, T_stg
dV/dt
Soldering Recommendations (Peak Temperature) ^c
for 10 s
LIMIT
650
± 30
46
29
154
3.3
596
417
-55 to +150
70
5.3
300
UNIT
V
A
W/°C
mJ
W
°C
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V_DD = 140 V, starting T_J = 25 °C, L = 28.2 mH, R_g = 25 , I_AS = 6.5 A.
c. 1.6 mm from case.
d. I_SD  I_D, dI/dt = 100 A/μs, starting T_J = 25 °C.
S16-0524-Rev. A, 21-Mar-16
1
Document Number: 91792
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000