SIHG20N50C-E3 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Power MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiHG20N50C
Vishay Siliconix
70
V_GS
Top 15 V
60
14 V
13 V
12 V
50
11 V
10 V
9.0 V
40
8.0 V
7.0 V
6.0 V
30 ^{Bottom 5.0 V}
T_J = 25 °C
20
10
7.0 V
0
0
6
12
18
24
30
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, T_C = 25 °C
100
T_J = 150 °C
10
T_J = 25 °C
1
0.1
0.01
5
6
7
8
9
10
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
40
V_GS
Top 15 V
14 V
13 V
30
12 V
11 V
10 V
9.0 V
8.0 V
20
7.0 V
6.0 V
Bottom 5.0 V
10
T_J = 150 °C
7.0 V
0
0
6
12
18
24
30
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, T_C = 150 °C
3
I_D = 17 A
2.5
2
1.5
V_GS = 10 V
1
0.5
0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
www.vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000