SIHG20N50C-E3 Datasheet, PDF (1/8 Pages) Vishay Siliconix – Power MOSFET

Power MOSFET
SiHG20N50C
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V) at T_J max.
R_DS(on) (Ω)
Q_g (Max.) (nC)
Q_gs (nC)
Q_gd (nC)
Configuration
560
V_GS = 10 V
76
21
34
Single
0.270
D
TO-247AC
G
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Low Figure-of-Merit R_on x Q_g
• 100 % Avalanche Tested
• High Peak Current Capability
• dV/dt Ruggedness
• Improved T_rr/Q_rr
• Improved Gate Charge
• High Power Dissipations Capability
• Compliant to RoHS Directive 2002/95/EC
S
D
G
S
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
TO-247AC
SiHG20N50C-E3
SiHG20N50C-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)^e
Pulsed Drain Current^a
Linear Derating Factor
V_DS
V_GS
V_GS at 10 V
T_C = 25 °C
T_C = 100 °C
I_D
I_DM
Single Pulse Avalanche Energy^b
Maximum Power Dissipation
Peak Diode Recovery dV/dt^c
E_AS
P_D
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
T_J, T_stg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature.
b. V_DD = 50 V, starting T_J = 25 °C, L = 2.5 mH, R_g = 25 Ω, I_AS = 17 A.
c. I_SD ≤ 18 A, dI/dt ≤ 380 A/μs, V_DD ≤ V_DS, T_J ≤ 150 °C.
d. 1.6 mm from case.
e. Limited by maximum junction temperature.
LIMIT
500
± 30
20
11
80
1.8
361
250
5
- 55 to + 150
300^d
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
Maximum Junction-to-Case (Drain)
R_thJA
R_thJC
TYP.
-
-
MAX.
40
0.5
UNIT
V
A
W/°C
mJ
W
V/ns
°C
UNIT
°C/W
Document Number: 91382
S11-0440-Rev. C, 14-Mar-11
www.vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000