SIE802DF Datasheet, PDF (3/10 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
100
20
SiE802DF
Vishay Siliconix
80
16
60
40
20
0
0.0
0.0025
V_GS = 10 V thru 4 V
3V
0.1
0.2
0.3
0.4
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
12
8
T_C = 125 °C
4
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
10 000
0.0023
0.0021
V_GS = 4.5 V
8000
C_iss
6000
0.0019
4000
0.0017
V_GS = 10 V
0.0015
0
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 23.6 A
8
V_DS = 15 V
6
V_DS = 24 V
4
2000
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V, 10 V
I_D = 23.6 A
1.4
1.2
1.0
2
0.8
0
0
20
40
60
80
100 120
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72985
S09-1337-Rev. E, 13-Jul-09
www.vishay.com
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