SIB914DK Datasheet, PDF (3/9 Pages) Vishay Siliconix – Dual N-Channel 1.2-V (G-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
6
1.0
V_GS = 5 thru 2.5 V
5
V_GS = 2 V
0.8
4
0.6
3
V_GS = 1.5 V
0.4
2
1
V_GS = 1 V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.2
0.0
0.0
0.5
200
SiB914DK
Vishay Siliconix
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.4
0.3
V_GS = 1.2 V
0.2
V_GS = 1.5 V ^VGS ^{= 1.8 V}
V_GS = 2.5 V
0.1
V_GS = 4.5 V
0.0
0
1
2
3
4
5
6
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
5
I_D = 2.5 A
4
3
V_DS = 4 V
V_DS = 6.4 V
2
1
160
C_iss
120
C_oss
80
40 ^Crss
0
0
1.7
1.5
1.3
2
4
6
8
V_DS - Drain-to-Source Voltage (V)
Capacitance
V_GS = 1.8 V; I_D = 1.9 A
V_GS = 2.5 V; I_D = 2.2 A
1.1
V_GS = 4.5 V; I_D = 2.5 A
0.9
0
0.0
0.4
0.8
1.2
1.6
2.0
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 68792
S-81946-Rev. A, 25-Aug-08
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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3