SIA923EDJ Datasheet, PDF (3/7 Pages) Vishay Siliconix – Dual P-Channel 20 V (D-S) MOSFET

SiA923EDJ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
40
30
T_J = 25 °C
20
10
0
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-to-Source Voltage
10^-1
10^-2
10^-3
T_J = 150 °C
10^-4
10^-5
10^-6
T_J = 25 °C
10^-7
10^-8
10^-9
0
3
6
9
12
15
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-to-Source Voltage
15
5
V_GS = 5 V thru 2.5 V
12
V_GS = 2 V
4
9
3
6
V_GS = 1.5 V
3
V_GS = 1 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.20
V_GS = 1.5 V
0.16
2
1
0
0.0
1500
T_C = 25 °C
T_C = 125 °C
T_C = - 55 °C
0.3
0.6
0.9
1.2
1.5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
0.12
0.08
V_GS = 1.8 V
V_GS = 2.5 V
0.04
V_GS = 4.5 V
0
0
3
6
9
12
15
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
900
C_iss
600
300
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 66803
S10-1535-Rev. A, 19-Jul-10
www.vishay.com
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