SI9926ADY Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET

New Product
Si9926ADY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.08
2100
Capacitance
0.06
1800
C_iss
1500
0.04
V_GS = 2.5 V
0.02
V_GS = 4.5 V
0.00
0
6
12
18
24
30
I_D – Drain Current (A)
1200
900
600
C_oss
300
0
0
C_rss
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
Gate Charge
4.5
V_DS = 10 V
3.6
I_D = 6 A
2.7
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 4.5 V
I_D = 6 A
1.4
1.2
1.8
1.0
0.8
0.9
0.6
0.0
0
3
6
9
12
15
Q_g – Total Gate Charge (nC)
0.4
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
Source-Drain Diode Forward Voltage
20
On-Resistance vs. Gate-to-Source Voltage
0.10
10
T_J = 150_C
T_J = 25_C
0.08
0.06
I_D = 6 A
0.04
0.02
0
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71633
S-04055—Rev. A, 25-Jun-01
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
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