SI9926ADY Datasheet, PDF (2/4 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET

Si9926ADY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = 20 V, V_GS = 0 V
V_DS = 20 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 6 A
V_GS = 2.5 V, I_D = 5 A
V_DS = 15 V, I_D = 6 A
I_S = 1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 15 V, V_GS = 4.5 V, I_D = 6 A
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 4.5 V, R_G = 6 W
I_F = 1.7 A, di/dt = 100 A/ms
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Min Typ Max Unit
0.6
V
"100
nA
1
mA
25
20
A
0.023
0.030
W
0.030
0.040
22
S
0.7
1.2
V
13
20
3
nC
3.3
22
35
40
60
50
75
ns
20
30
40
80
Output Characteristics
30
V_GS = 5 thru 3 V
2.5 V
24
18
12
6
0
0
2V
1.5 V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
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2
Transfer Characteristics
30
24
18
12
T_C = 125_C
6
25_C
–55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS – Gate-to-Source Voltage (V)
Document Number: 71633
S-04055—Rev. A, 25-Jun-01