SI9436DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
Si9436DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
1400
Capacitance
0.08
0.06
0.04
V_GS = 4.5 V
V_GS = 10 V
0.02
0
0
8
16
24
32
40
I_D – Drain Current (A)
10
V_DS = 15 V
I_D = 5 A
8
Gate Charge
1200
1000
800
C_iss
600
400
C_oss
200
C_rss
0
0
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 6.8 A
1.4
6
1.2
4
1.0
2
0.8
0
0
3
6
9
12
15
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
40
T_J = 150_C
10
T_J = 25_C
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
I_D = 6.8 A
0.06
0.04
0.02
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
V_SD – Source-to-Drain Voltage (V)
Document Number: 71257
S-01831—Rev. B, 21-Aug-00
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
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