SI9436DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si9436DY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 24 V, V_GS = 0 V
V_DS = 24 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 6.8 A
V_GS = 4.5 V, I_D = 5.6 A
V_DS = 15 V, I_D = 6.8 A
I_S = 2.5 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 15 V, V_GS = 10 V, I_D = 6.8 A
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 2.5 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min Typ Max Unit
1.0
V
"100
nA
1
mA
5
40
A
0.030
0.040
W
0.044
0.060
12
S
0.75
1.2
V
14
30
1.9
nC
3.5
11
20
9
20
25
50
ns
10
20
60
100
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
40
32
V_GS = 10 thru 5 V
4V
24
16
8
3V
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
www.vishay.com
2
Transfer Characteristics
40
T_C = –55_C
32
25_C
24
125_C
16
8
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
Document Number: 71257
S-01831—Rev. B, 21-Aug-00