SI9435BDY_13 Datasheet, PDF (3/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
V_GS = 10 V thru 6 V
5V
25
25
20
20
15
15
4V
10
10
5
3V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.15
5
0
0
1100
Si9435BDY
Vishay Siliconix
T_C = 125 °C
25 °C
- 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.12
0.09
0.06
0.03
0.00
0
10
8
V_GS = 4.5 V
V_GS = 6 V
V_GS = 10 V
4
8
12
16
20
I_D - Drain Current (A)
On-Resistance vs. Drain Current
V_DS = 15 V
I_D = 3.5 A
880
C_iss
660
440
C_oss
220
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V
I_D = 5.7 A
1.4
6
1.2
4
1.0
2
0.8
0
0.0
3.2
6.4
9.6
12.8
16.0
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 72245
S09-0870-Rev. D, 18-May-09
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
www.vishay.com
3