SI9435BDY_13 Datasheet, PDF (2/9 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si9435BDY
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.^a
Max.
Unit
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = - 250 µA
- 1.0
- 3.0
V
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
I_DSS
V_DS = - 30 V, V_GS = 0 V
V_DS = - 30 V, V_GS = 0 V, T_J = 70 °C
-1
µA
-5
On-State Drain Current^b
I_D(on)
V_DS ≤ - 10 V, V_GS = - 10 V
V_DS ≤ - 5 V, V_GS = - 4.5 V
- 20
-5
A
V_GS = - 10 V, I_D = - 5.7 A
0.033 0.042
Drain-Source On-State Resistance^b
R_DS(on)
V_GS = - 6 V, I_D = - 5 A
0.043 0.055
Ω
V_GS = - 4.5 V, I_D = - 4.4 A
0.056 0.070
Forward Transconductance^b
g_fs
V_DS = - 15 V, I_D = - 5.7 A
13
S
Diode Forward Voltage^b
V_SD
I_S = - 2.3 A, V_GS = 0 V
- 0.8
- 1.1
V
Dynamic^a
Total Gate Charge
Q_g
16
24
Gate-Source Charge
Q_gs
V_DS = - 15 V, V_GS = - 10 V, I_D = - 3.5 A
2.3
nC
Gate-Drain Charge
Q_gd
4.5
Gate Resistance
R_g
8.8
Ω
Turn-On Delay Time
t_d(on)
14
25
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = - 15 V, R_L = 15 Ω
I_D ≅ - 1 A, V_GEN = - 10 V, R_g = 6 Ω
14
25
42
70
ns
Fall Time
t_f
30
50
Source-Drain Reverse Recovery Time
t_rr
I_F = - 1.2 A, dI/dt = 100 A/µs
30
60
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 72245
S09-0870-Rev. D, 18-May-09