SI9102 Datasheet, PDF (3/7 Pages) Vishay Siliconix – 3-W High-Voltage Switchmode Regulator

Si9102
Vishay Siliconix
SPECIFICATIONS^a
Parameter
Error Amplifier
Output Current
Power Supply Rejection
Current Limit
Symbol
Test Conditions
Unless Otherwise Specified
DISCHARGE = −V_IN = 0 V
V_CC = 10 V, +V_IN = 48 V
R_BIAS = 390 kW, R_OSC = 330 kW
Limits
D Suffix −40 to 85_C
Temp^b Min^d Typ^c Max^d
I_OUT
PSRR
Sink (V_FB = 4.5 V)
9.5 V v V_CC v 13.5 V
Room
0.12
0.15
Room
50
70
Threshold Voltage
Delay to Output^e
Pre-Regulator/Start-Up
V_SOURCE
t_d
R_L = 100 W from DRAIN to V_CC
V_FB = 0 V
R_L = 100 W from DRAIN to V_CC
V_SOURCE = 1.5 V, See Figure 1
Room
1.0
1.2
1.4
Room
100
200
Input Voltage
Input Leakage Current
Pre-Regulator Start-Up Current
V_CC Pre-Regulator Turn-Off Threshold
Voltage
Undervoltage Lockout
V_REG, −V_UVLO
Supply
+V_IN
+I_IN
I_START
V_REG
V_UVLO
V_DELTA
I_IN = 10 mA
V_CC w 10 V
Pulse Width v 300 ms, V_CC = 7 V
I_{PRE-REGULATOR} = 10 mA
R_L = 100 W from DRAIN to V_CC
See Detailed Description
Room
Room
Room
8
120
10
15
Room
7.8
9.4
9.7
Room
7.0
8.8
9.2
Room
0.3
0.6
Supply Current
Bias Current
Logic
I_CC
I_BIAS
Room
0.45
0.6
1.0
Room
10
15
20
SHUTDOWN Delay^e
SHUTDOWN Pulse Width^e
RESET Pulse Width^e
Latching Pulse Width^e
SHUTDOWN and RESET Low
t_SD
V_SOURCE = −V_IN, See Figure 2
Room
50
100
t_SW
Room
50
t_RW
See Figure 3
Room
50
t_LW
Room
25
Input Low Voltage
V_IL
Input High Voltage
V_IH
Input Current Input Voltage High
I_IH
Input Current Input Voltage Low
I_IL
V_IN = 10 V
V_IN = 0 V
Room
2.0
Room
8.0
Room
1
5
Room
−35
−25
MOSFET Switch
Breakdown Voltage
Drain-Source On Resistance^f
Drain Off Leakage Current
Drain Capacitance
V_BR(DSS)
r_DS(on)
I_DSS
C_DS
I_DRAIN = 100 mA
I_DRAIN = 100 mA
V_DRAIN = 100 V
Full
200
220
Room
7
Room
5
10
Room
35
Notes
a. Refer to PROCESS OPTION FLOWCHART for additional information.
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. Temperature coefficient of r_DS(on) is 0.75% per _C, typical.
g. C_STRAY Pin 8 = v 5 pF
Unit
mA
dB
V
ns
V
mA
mA
V
mA
mA
ns
V
mA
V
W
mA
pF
Document Number: 70001
S-42040—Rev. G, 15-Nov-04
www.vishay.com
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