SI7983DP Datasheet, PDF (3/6 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Si7983DP
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.06
6000
0.05
0.04
5000
C_iss
4000
0.03
0.02
V_GS = 1.8 V
V_GS = 2.5 V
0.01
0.00
0
V_GS = 4.5 V
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
5
V_DS = 10 V
4
I_D = 12 A
3000
2000
1000
C_rss
0
0
4
C_oss
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V
1.4
I_D = 12 A
3
1.2
2
1.0
1
0.8
0
0
10
20
30
40
50
60
Q_g - Total Gate Charge (nC)
Gate Charge
30
T_J = 150 °C
10
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.06
0.05
0.04
0.03
I_D = 12 A
0.02 I_D = 4.1 A
0.01
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72637
S09-0272-Rev. B, 16-Feb-09
www.vishay.com
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