SI7983DP Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

Dual P-Channel 20-V (D-S) MOSFET
Si7983DP
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.017 at V_GS = - 4.5 V
- 20
0.020 at V_GS = - 2.5 V
0.024 at V_GS = - 1.8 V
I_D (A)
- 12
- 11
- 10.1
PowerPAK SO-8
6.15 mm
D1
8
D1
7
D2
6
D2
5
S1
1
G1
2
5.15 mm
S2
3
G2
4
Bottom View
Ordering Information: Si7983DP-T1-E3 (Lead (Pb)-free)
Si7983DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET^® Power MOSFET
• New Low Thermal Resistance PowerPAK^®
Package with Low 1.07 mm Profile
APPLICATIONS
• Load Switch
S₁
S₂
G₁
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
Pulsed Drain Current
T_A = 25 °C
T_A = 70 °C
I_D
- 12
- 9.6
- 7.7
- 6.2
A
I_DM
- 30
Continuous Source Current (Diode Conduction)^a
I_S
- 2.9
- 1.2
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
3.5
1.4
2.2
0.9
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
26
60
2.2
Maximum
35
85
2.7
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72637
S09-0272-Rev. B, 16-Feb-09
www.vishay.com
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