SI7946DP Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual N-Channel 150-V (D-S) MOSFET

New Product
Si7946DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
1000
Capacitance
0.16
0.12
0.08
V_GS = 6 V
V_GS = 10 V
800
600
C_iss
400
0.04
0.00
0
2
4
6
8
10
I_D - Drain Current (A)
Gate Charge
10
V_DS = 75 V
I_D = 3.3 A
8
200
C_oss
C_rss
0
0 10 20 30 40 50 60 70 80
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.4
V_GS = 10 V
I_D = 3.3 A
2.0
6
1.6
4
1.2
2
0.8
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
10
T_J = 150_C
T_J = 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72282
S-31361—Rev. A, 30-Jun-03
0.4
-50 -25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.40
0.35
0.30
I_D = 3.3 A
0.25
I_D = 1 A
0.20
0.15
0.10
0.05
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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