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SI7946DP Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual N-Channel 150-V (D-S) MOSFET
Si7946DP
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 120 V, VGS = 0 V
VDS = 120 V, VGS = 0 V, TJ = 55_C
VDS w 5 V, VGS = 10 V
VGS = 10 V, ID = 3.3 A
VGS = 6 V, ID = 3.1 A
VDS = 15 V, ID = 3.3 A
IS = 2.9 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resostamce
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 75 V, VGS = 10 V, ID = 3.3 A
f = 1MHz
VDD = 75 V, RL = 75 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 2.9 A, di/dt = 100 A/ms
Min Typ Max Unit
2
4.0
V
"100
nA
1
mA
5
10
A
0.124
0.150
W
0.137
0.168
9
S
0.87
1.2
V
12.6
20
2.8
nC
4.5
3.5
W
11
20
15
25
30
45
ns
20
30
62
100
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
8
6
4
2
0
0
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2
Output Characteristics
VGS = 10 thru 6 V
5V
4V
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
10
8
6
4
TC = 125_C
2
25_C
- 55_C
0
0
1
2
3
4
5
6
VGS - Gate-to-Source Voltage (V)
Document Number: 72282
S-31361—Rev. A, 30-Jun-03