SI7892DP Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7892DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
On-Resistance vs. Drain Current
4000
Capacitance
0.008
0.006
0.004
0.002
V_GS = 4.5 V
V_GS = 10 V
0.000
0
10
20
30
40
50
60
I_D - Drain Current (A)
Gate Charge
10
V_DS = 15 V
8
I_D = 25 A
6
4
2
0
0
10
20
30
40
50
60
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
60
3000
C_iss
2000
1000
C_oss
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 10 V
I_D = 25 A
1.4
1.2
1.0
0.8
0.6
-50 -25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.020
0.016
10
T_J = 150_C
T_J = 25_C
0.012
0.008
0.004
I_D = 25 A
1
0.00
0.2
0.4
0.6
0.8 1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71773
S-31727—Rev. B, 18-Aug-03
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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