SI7892DP Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7892DP
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 24 V, V_GS = 0 V
V_DS = 24 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 25 A
V_GS = 4.5 V, I_D = 22 A
V_DS = 15 V, I_D = 25 A
I_S = 4.5 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 15 V, V_GS = 4.5 V, I_D = 25 A
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 2.9 A, di/dt = 100 A/ms
Min Typ Max Unit
1.0
V
"100
nA
1
mA
5
30
A
0.0037 0.0045
W
0.0048 0.006
80
S
0.75
1.2
V
25
35
6.7
nC
9.7
0.5
2.4
W
17
30
10
20
65
130
ns
35
60
50
80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
V_GS = 10 thru 4 V
50
40
3V
30
20
10
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
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2
Transfer Characteristics
50
40
30
20
10
0
0
T_C = 125_C
25_C
- 55_C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Document Number: 71773
S-31727—Rev. B, 18-Aug-03