SI7862ADP Datasheet, PDF (3/12 Pages) Vishay Siliconix – N-Channel 16-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.010
10000
Si7862ADP
Vishay Siliconix
0.008
0.006
V_GS = 2.5 V
8000
C_iss
6000
0.004
0.002
V_GS = 4.5 V
4000
2000
C_rss
C_oss
0.000
0
10
20
30
40
50
60
I _D - Drain Current (A)
On-Resistance vs. Drain Current
6
5
V_DS = 6 V
I_D = 29 A
4
3
2
1
0
0
15
30
45
60
75
Q_g - Total Gate Charge (nC)
Gate Charge
60
T_J = 150 °C
10
T_J = 25 °C
0
0 2 4 6 8 10 12 14 16
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 4.5 V
1.4
I_D = 29 A
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.015
0.012
0.009
0.006
0.003
I_D = 29 A
1
0
0.2 0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73165
S-80438-Rev. C, 03-Mar-08
www.vishay.com
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