SI7862ADP Datasheet, PDF (1/12 Pages) Vishay Siliconix – N-Channel 16-V (D-S) MOSFET

N-Channel 16-V (D-S) MOSFET
Si7862ADP
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.003 at V_GS = 4.5 V
16
0.0055 at V_GS = 2.5 V
I_D (A)
29
23
Q_g (Typ.)
54
PowerPAK^® SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7862ADP-T1-E3 (Lead (Pb)-free)
Si7862ADP-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free available
• TrenchFET^® Power MOSFETS: 2.5 V Rated
• Low 3.3 mΩ R_DS(on)
• Low Gate Resistance
• 100 % R_g Tested
RoHS
COMPLIANT
APPLICATIONS
• Synchronous Rectification
• Low Output Voltage Synchronous Rectification
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
16
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
29
18
23
14
A
Pulsed Drain Current (10 µs Pulse Width)
I_DM
60
Continuous Source Current (Diode Conduction)^a
I_S
4.5
1.6
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
5.4
1.9
3.4
1.2
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73165
S-80438-Rev. C, 03-Mar-08
www.vishay.com
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