SI7485DP Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
Si7485DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
On-Resistance vs. Drain Current
11000
Capacitance
0.016
8800
C_iss
0.012
0.008
V_GS = 1.8 V
V_GS = 2.5 V
6600
4400
0.004
V_GS = 4.5 V
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
Gate Charge
6
V_DS = 10 V
5
I_D = 20 A
4
3
2
1
0
0
20
40
60
80
100 120
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
T_J = 150_C
10
T_J = 25_C
1
2200
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 20 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.030
0.024
I_D = 20 A
0.018
0.012
0.006
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 72275
S-31416—Rev. A, 07-Jul-03
0.000
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
www.vishay.com
3