SI7485DP Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si7485DP
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 1 mA
V_DS = 0 V, V_GS = "8 V
V_DS = - 16 V, V_GS = 0 V
V_DS = - 16 V, V_GS = 0 V, T_J = 70_C
V_DS v - 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 20 A
V_GS = - 2.5 V, I_D = - 18 A
V_GS = - 1.8 V, I_D = - 15 A
V_DS = - 15 V, I_D = - 20 A
I_S = - 4.5 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_G
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = - 10 V, V_GS = - 5 V, I_D = - 20 A
V_DD = - 10 V, R_L = 10 W
I_D ^ - 1 A, V_GEN = - 4.5 V, R_G = 6 W
I_F = - 2.9 A, di/dt = 100 A/ms
Min
Typ
Max Unit
- 0.4
- 0.9
V
"100
nA
-1
mA
- 10
- 40
A
0.006
0.0073
0.0074 0.0090
W
0.0106
0.013
80
S
- 0.62
- 1.1
V
99
150
11.5
nC
29
2.4
W
80
120
140
210
360
540
ns
170
260
55
80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
50
40
30
20
10
0
0
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2
Output Characteristics
V_GS = 5 thru 2 V
1.5 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Transfer Characteristics
50
40
30
20
T_C = 125_C
10
25_C
- 55_C
0
0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00
V_GS - Gate-to-Source Voltage (V)
Document Number: 72275
S-31416—Rev. A, 07-Jul-03