SI7458DP Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) Fast Switching MOSFET

New Product
Si7458DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
On-Resistance vs. Drain Current
7000
Capacitance
0.008
0.006
V_GS = 2.5 V
6000
C_iss
5000
4000
0.004
0.002
V_GS = 4.5 V
3000
2000
1000
C_oss
C_rss
0.000
0
10
20
30
40
50
I_D – Drain Current (A)
Gate Charge
5
V_DS = 10 V
4
I_D = 22 A
0
0
4
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
1.4
I_D = 22 A
3
1.2
2
1.0
1
0.8
0
0
8
16
24
32
40
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.020
T_J = 150_C
10
T_J = 25_C
0.015
0.010
0.005
I_D = 22 A
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71821
S-20012—Rev. A, 04-Mar-02
0.000
0
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
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