SI7458DP Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) Fast Switching MOSFET

New Product
Si7458DP
Vishay Siliconix
N-Channel 20-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
20
r_DS(on) (W)
0.0045 @ V_GS = 4.5 V
0.0075 @ V_GS = 2.5 V
I_D (A)
22
19
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
APPLICATIONS
D Synchronous Rectifier–Low Output Voltage
D Portable Computer Battery Selection or
Protection
PowerPakt SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"12
22
13.4
17.6
10.7
50
4.3
1.6
5.2
1.9
3.3
1.2
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71821
S-20012—Rev. A, 04-Mar-02
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
18
50
1.0
Maximum
23
65
1.5
Unit
_C/W
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