SI7454DP-T1-E3 Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 100-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.05
2500
Si7454DP
Vishay Siliconix
0.04
0.03
0.02
V_GS = 6.0 V
2000
C_iss
V_GS = 10 V
1500
1000
0.01
0.00
0
6
12
18
24
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 50 V
I_D = 7.8 A
8
6
4
2
0
0
30
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
T_J = 150 °C
10
T_J = 25 °C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
500
0
0
C_rss
C_oss
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.4
V_GS = 10 V
I_D = 7.8 A
2.0
1.6
1.2
0.8
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.06
0.05
I_D = 7.8 A
0.04
0.03
0.02
0.01
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71618
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
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