SI7445DP Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si7445DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.020
On-Resistance vs. Drain Current
15000
Capacitance
0.016
12000
C_iss
0.012
V_GS = 1.8 V
0.008
0.004
V_GS = 2.5 V
V_GS = 4.5 V
0.000
0
5
10
15
20
25
30
I_D - Drain Current (A)
Gate Charge
5
V_DS = 15 V
4
I_D = 19 A
9000
6000
3000
C_oss
0 ^Crss
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
1.4
I_D = 19 A
3
1.2
2
1.0
1
0.8
0
0
20
40
60
80
100
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
T_J = 150_C
10
T_J = 25_C
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.030
0.024
0.018
I_D = 19 A
0.012
0.006
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71626
S-31728—Rev. B, 18-Aug-03
0.000
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
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