SI7445DP Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si7445DP
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = - 250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = - 16 V, V_GS = 0 V
V_DS = - 16 V, V_GS = 0 V, T_J = 70_C
V_DS v - 5 V, V_GS = - 4.5 V
V_GS = - 4.5 V, I_D = - 19 A
V_GS = - 2.5 V, I_D = - 17 A
V_GS = - 1.8 V, I_D = - 10 A
V_DS = - 15 V, I_D = - 19 A
I_S = - 4.3 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate-Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = - 15 V, V_GS = - 5 V, I_D = - 19 A
V_DD = - 15 V, R_L = 15 W
I_D ^ - 1 A, V_GEN = - 4.5 V, R_G = 6 W
I_F = - 4.3 A, di/dt = 100 A/ms
Min
Typ
Max Unit
- 0.45
V
"100
nA
-1
mA
- 10
- 40
A
0.0064 0.0077
0.0078 0.0094
W
0.0105 0.0125
75
S
- 0.65
- 1.1
V
92
140
19
nC
16.5
1
2
3.4
W
40
60
45
65
400
600
ns
190
290
50
80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V_GS = 5 thru 2 V
40
30
1.5 V
20
10
0
0
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
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2
Transfer Characteristics
50
40
30
20
10
0
0.0
T_C = 125_C
25_C
- 55_C
0.5
1.0
1.5
2.0
V_GS - Gate-to-Source Voltage (V)
Document Number: 71626
S-31728—Rev. B, 18-Aug-03