SI7421DN Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
Si7421DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.06
2000
Capacitance
0.05
0.04
0.03
0.02
V_GS = 4.5 V
V_GS = 10 V
0.01
0.00
0
5
10
15
20
25
30
I_D − Drain Current (A)
Gate Charge
10
V_DS = 15 V
8
I_D = 9.8 A
6
4
2
0
0
5
10
15
20
25
30
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
1600
C_iss
1200
800
400
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
1.5
V_GS = 10 V
1.4
I_D = 9.8 A
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
T_J = 150_C
10
T_J = 25_C
0.08
0.06
0.04
I_D = 2.6 A
0.02
I_D = 9.8 A
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD − Source-to-Drain Voltage (V)
Document Number: 72416
S-32411—Rev. B, 24-Nov-03
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
www.vishay.com
3