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SI7421DN Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET | |||
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New Product
P-Channel 30-V (D-S) MOSFET
Si7421DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.025 @ VGS = â10 V
â30
0.043 @ VGS = â4.5 V
ID (A)
â9.8
â7.4
FEATURES
D TrenchFETr Power MOSFET
D New PowerPAKr Package
â Low Thermal Resistance, RthJC
â Low 1.07-mm Profile
APPLICATIONS
D Battery Switch
PowerPAK 1212-8
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7421DN-T1âE3
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
â30
VGS
"20
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 85_C
TA = 25_C
TA = 85_C
ID
IDM
IS
PD
TJ, Tstg
â9.8
â6.4
â7
â4.6
â30
â3
â1.3
3.6
1.5
1.9
0.8
â55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
Document Number: 72416
S-32411âRev. B, 24-Nov-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJC
Typical
28
65
2.9
Maximum
35
81
3.8
Unit
_C/W
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