SI7404DN Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching MOSFET

New Product
Si7404DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.05
3000
Capacitance
0.04
0.03
0.02
0.01
0.00
0
V_GS = 2.5 V
V_GS = 4.5 V
V_GS = 10 V
5 10 15 20 25 30 35 40
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
8
I_D = 13.3 A
6
4
2
2500
C_iss
2000
1500
1000
500
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 10 V
I_D = 13.3 A
1.4
1.2
1.0
0.8
0
0
10
20
30
40
50
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
T_J = 150_C
10
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
0.04
I_D = 13.3 A
I_D = 5 A
0.03
0.02
T_J = 25_C
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71658
S-05681—Rev. C, 07-Feb-02
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
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