SI7404DN Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching MOSFET

New Product
Si7404DN
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.013 @ V_GS = 10 V
0.015 @ V_GS = 4.5 V
0.022 @ V_GS = 2.5 V
I_D (A)
13.3
12.4
10.2
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
APPLICATIONS
D Lilon Battery Protection
PowerPAKt 1212-8
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Single Avalanche Current
Single Avalanche Energy (Duty Cycle 1%)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
I_S
P_D
T_J, T_stg
30
"12
13.3
8.5
10.6
6.8
40
15
11
3.2
1.3
3.8
1.5
2.0
0.8
–55 to 150
Unit
V
A
mJ
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 71658
S-05681—Rev. C, 07-Feb-02
Symbol
R_thJA
R_thJC
Typical
26
65
1.9
Maximum
33
81
2.4
Unit
_C/W
www.vishay.com
1