SI7358ADP Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
Si7358ADP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
On-Resistance vs. Drain Current
6000
Capacitance
0.008
0.006
0.004
0.002
V_GS = 4.5 V
V_GS = 10 V
0.000
0
10
20
30
40
50
I_D − Drain Current (A)
Gate Charge
6
5
V_DS = 15 V
I_D = 23 A
4
5000
C_iss
4000
3000
2000
1000
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 10 V
I_D = 23 A
1.4
3
1.2
2
1.0
1
0.8
0
0 5 10 15 20 25 30 35 40
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
60
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.020
T_J = 150_C
10
T_J = 25_C
0.016
0.012
0.008
0.004
I_D = 23 A
1
0.00
0.2
0.4
0.6
0.8
1.0 1.2
V_SD − Source-to-Drain Voltage (V)
Document Number: 73161
S-41959—Rev. A, 25-Oct-04
0.000
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
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