SI7358ADP Datasheet, PDF (2/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si7358ADP
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55_C
V_DS w 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 23 A
V_GS = 4.5 V, I_D = 20 A
V_DS = 15 V, I_D = 23 A
I_S = 4.5 A, V_GS = 0 V
1.0
3.0
V
"100
nA
1
5
mA
30
A
0.0032 0.0042
W
0.0045 0.0059
90
S
0.75
1.1
V
Input Capacitance
C_iss
4650
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
C_oss
C_rss
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 15 V, V_ss = 0 V, f = 1 kHz
V_DS = 15 V, V_GS = 4.5 V, I_D = 23 A
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 10 V, R_g = 6 W
I_F = 2.9 A, di/dt = 100 A/ms
880
pF
390
30.5
40
12.5
nC
10
0.5
1.0
1.5
W
21
35
10
20
83
130
ns
27
45
50
80
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
60
V_GS = 10 thru 4 V
50
40
30
20
10
3V
0
0
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
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2
Transfer Characteristics
60
50
40
30
20
T_C = 125_C
10
25_C
−55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS − Gate-to-Source Voltage (V)
Document Number: 73161
S-41959—Rev. A, 25-Oct-04