SI7230DN Datasheet, PDF (3/12 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.020
2000
0.016
0.012
0.008
V_GS = 4.5 V
V_GS = 10 V
1600
1200
800
Si7230DN
Vishay Siliconix
C_iss
0.004
0.000
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 15 V
I_D = 14 A
8
400
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V
I_D = 14 A
1.4
6
1.2
4
1.0
2
0.8
0
0
30
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.05
T_J = 150 °C
10
0.04
0.03
I_D = 14 A
T_J = 25 °C
0.02
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 74396
S-83052-Rev. B, 29-Dec-08
www.vishay.com
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