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SI7230DN Datasheet, PDF (1/12 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET
N-Channel 30-V (D-S) MOSFET
Si7230DN
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
0.012 at VGS = 10 V
0.016 at VGS = 4.5 V
ID (A)
14
12
PowerPAK 1212-8
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7230DN-T1-E3 (Lead (Pb)-free)
Si7230DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• TrenchFET® Power MOSFET
• PWM Optimized
• 100 % Rg Tested
APPLICATIONS
• DC/DC Converters
- Secondary Synchronous Rectifier
- High-Side MOSFET in Synchronous Buck
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
ID
14
9
11
7.5
Pulsed Drain Current
IDM
40
A
Continuous Source Current (Diode Conduction)a
IS
3.2
1.3
Single Pulse Avalanche Current
Avalanche Energy
IAS
14
L = 0.1 mH
EAS
9.8
mJ
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
3.7
1.5
2.3
1.0
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)b, c
TJ, Tstg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambienta
Maximum Junction-to-Case (Drain)
t ≤ 10 s
28
Steady State
RthJA
66
Steady State
RthJC
2.0
34
81
°C/W
2.4
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 74396
S-83052-Rev. B, 29-Dec-08
www.vishay.com
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