SI7222DN Datasheet, PDF (3/14 Pages) Vishay Siliconix – Dual N-Channel 40 V (D-S) MOSFET

Si7222DN
Vishay Siliconix
SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I_S
Pulse Diode Forward Current^a
I_SM
T_C = 25 °C
6
A
24
Body Diode Voltage
V_SD
I_S = 2 A
0.76
1.2
V
Body Diode Reverse Recovery Time
t_rr
25
40
ns
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
Q_rr
t_a
I_F = 1.7 A, dI/dt = 100 A/µs, T_J = 25 °C
t_b
17
26
nC
14
ns
11
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73439
S-83052-Rev. B, 29-Dec-08
www.vishay.com
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