SI7192DP Datasheet, PDF (3/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
5
V_GS = 10 thru 3 V
56
4
Si7192DP
Vishay Siliconix
42
3
T_C = 25 °C
28
2
14
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0024
0.0022
0.0020
V_GS = 4.5 V
1
T_C = 125 °C
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
7500
C_iss
6000
4500
0.0018
0.0016
V_GS = 10 V
0.0014
0
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 20 A
8
V_DS = 10 V
V_DS = 15 V
6
V_DS = 20 V
4
3000
1500
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.7
I_D = 20 A
1.5
V_GS = 10 V
1.3
V_GS = 4.5 V
1.1
2
0.9
0
0
20
40
60
80
100
Q_g - Total Gate Charge (nC)
Gate Charge
Document Number: 69815
S-80790-Rev. B, 14-Apr-08
0.7
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
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