SI7192DP Datasheet, PDF (1/7 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
N-Channel 30-V (D-S) MOSFET
Si7192DP
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0019 at V_GS = 10 V
30
0.00225 at V_GS = 4.5 V
I_D (A)^a
60
60
Q_g (Typ.)
43.5 nC
FEATURES
• Halogen-free
• TrenchFET^® Gen III Power MOSFET
• 100 % R_g Tested
• 100 % Avalanche Tested
RoHS
COMPLIANT
PowerPAK^® SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
APPLICATIONS
• VRM, POL, Server
• High Current DC/DC
- Low-Side
D
G
Bottom View
Ordering Information: Si7192DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
T_C = 25 °C
60^a
Continuous Drain Current (T_J = 150 °C)
T_C = 70 °C
T_A = 25 °C
I_D
60^a
42^{b, c}
Pulsed Drain Current
T_A = 70 °C
34^{b, c}
A
I_DM
100
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
60^a
5.6^{b, c}
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
50
E_AS
125
mJ
T_C = 25 °C
104
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
66.6
6.25^{b, c}
W
T_A = 70 °C
4.0^{b, c}
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{d, e}
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^{b, f}
Maximum Junction-to-Case (Drain)
t ≤ 10 s
R_thJA
15
Steady State
R_thJC
0.9
20
°C/W
1.2
Notes:
a. Package limited.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions is 54 °C/W.
Document Number: 69815
S-80790-Rev. B, 14-Apr-08
www.vishay.com
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