SI7174DP Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 75-V (D-S) MOSFET

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TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
70
60
V_GS = 10 thru 6 V
56
48
42
36
28
24
14
0
0
0.0080
V_GS = 5 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
12
0
0
4000
Si7174DP
Vishay Siliconix
T_C = 125 °C
T_C = 25 °C
T_C = - 55 °C
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.0074
0.0068
0.0062
V_GS = 8 V
V_GS = 10 V
3200
C_iss
2400
1600
0.0056
0.0050
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
6
V_DS = 20 V
4
V_DS = 40 V
V_DS = 60 V
800
C_oss
0 ^Crss
0
15
30
45
60
75
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 10 A
1.7
V_GS = 10 V
1.4
V_GS = 8 V
1.1
2
0.8
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 69975
S-80787-Rev. A, 14-Apr-08
www.vishay.com
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