English
Language : 

SI7174DP Datasheet, PDF (2/13 Pages) Vishay Siliconix – N-Channel 75-V (D-S) MOSFET
Si7174DP
Vishay Siliconix
New Product
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
VGS(th) Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
VDS
ΔVDS/TJ
ΔVGS(th)/TJ
VGS(th)
IGSS
IDSS
ID(on)
VGS = 0 V, ID = 250 µA
ID = 250 µA
VDS = VGS , ID = 250 µA
VDS = 0 V, VGS = ± 20 V
VDS = 75 V, VGS = 0 V
VDS = 75 V, VGS = 0 V, TJ = 55 °C
VDS ≥ 10 V, VGS = 10 V
Drain-Source On-State Resistancea
RDS(on)
VGS = 10 V, ID = 10 A
Forward Transconductancea
gfs
VDS = 15 V, ID = 10 A
Dynamicb
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
VDS = 40 V, VGS = 0 V, f = 1 MHz
VDS = 40 V, VGS = 10 V, ID = 10 A
f = 1 MHz
VDD = 40 V, RL = 10 Ω
ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω
VDD = 40 V, RL = 10 Ω
ID ≅ 10 A, VGEN = 8 V, Rg = 6 Ω
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
Pulse Diode Forward Currenta
ISM
Body Diode Voltage
VSD
IS = 4 A
Body Diode Reverse Recovery Time
trr
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Qrr
ta
IF = 10 A, di/dt = 100 A/µs, TJ = 25 °C
Reverse Recovery Rise Time
tb
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
75
V
76
mV/°C
- 11
2.5
4.5
V
± 100
nA
1
µA
10
40
A
0.0057 0.007
Ω
34
S
2770
345
pF
140
47.5
72
13.8
nC
14.4
0.3
1.2
2.4
Ω
16
30
11
22
28
50
9
18
ns
21
40
11
22
38
70
12
24
60
A
80
0.75
1.2
V
47
95
ns
103
210
nC
36
ns
11
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69975
S-80787-Rev. A, 14-Apr-08