SI7149ADP Datasheet, PDF (3/13 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
150
150
V_GS = 10 V thru 5 V
120
120
V_GS = 4 V
90
90
60
60
T_C = 25 °C
Si7149ADP
Vishay Siliconix
30
0
0.0
0.0150
V_GS = 3 V
V_GS = 2 V
1.0
2.0
3.0
4.0
5.0
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0120
30
T_C = 125 °C
T_C = - 55 °C
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
7000
C_iss
5600
0.0090
V_GS = 4.5 V
4200
0.0060
0.0030
0.0000
0
V_GS = 10 V
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 10 A
8
V_DS = 15 V
6
V_DS = 10 V
4
V_DS = 20 V
2
2800
1400
C_oss
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
I_D = 15 A
1.4
V_GS = 10 V
1.2
V_GS = 4.5 V
1.0
0.8
0
0
20
40
60
80
100
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 62839
For technical questions, contact: [e-mail]
www.vishay.com
S13-1158-Rev. A, 13-May-13
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000