SI7149ADP Datasheet, PDF (2/13 Pages) Vishay Siliconix – P-Channel 30 V (D-S) MOSFET

Si7149ADP
Vishay Siliconix
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0, I_D = - 250 µA
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
V_DS/T_J
V_GS(th)/T_J
I_D = - 250 µA
Gate-Source Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = - 250 µA
Gate-Source Leakage
I_GSS
V_DS = 0 V, V_GS = ± 25 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = - 30 V, V_GS = 0 V
V_DS = - 30 V, V_GS = 0 V, T_J = 55 °C
On-State Drain Current^a
I_D(on)
V_DS  - 10 V, V_GS = - 10 V
Drain-Source On-State Resistance^a
R_DS(on)
V_GS = - 10 V, I_D = - 15 A
V_GS = - 4.5 V, I_D = - 10 A
Forward Transconductance^a
g_fs
V_DS = - 10 V, I_D = - 15 A
Dynamic^b
Input Capacitance
C_iss
Output Capacitance
C_oss
V_DS = - 15 V, V_GS = 0 V, f = 1 MHz
Reverse Transfer Capacitance
C_rss
Total Gate Charge
Q_g
V_DS = - 15 V, V_GS = - 10 V, I_D = - 10 A
Gate-Source Charge
Gate-Drain Charge
Q_gs
V_DS = - 15 V, V_GS = - 4.5 V, I_D = - 10 A
Q_gd
Gate Resistance
R_g
f = 1 MHz
Turn-On Delay Time
t_d(on)
Rise Time
Turn-Off DelayTime
t_r
t_d(off)
V_DD = - 15 V, R_L = 1.5 
I_D  - 10 A, V_GEN = - 10 V, R_g = 1 
Fall Time
t_f
Turn-On Delay Time
t_d(on)
Rise Time
Turn-Off DelayTime
t_r
t_d(off)
V_DD = - 15 V, R_L = 1.5 
I_D  - 10 A, V_GEN = - 4.5 V, R_g = 1 
Fall Time
t_f
Drain-Source Body Diode Characteristics
Continous Source-Drain Diode Current
Pulse Diode Forward Current (100 µs)
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
I_S
T_C = 25 °C
I_SM
V_SD
I_S = - 3 A, V_GS = 0
t_rr
Q_rr
t_a
I_F = - 10 A, dI/dt = 100 A/µs, T_J = 25 °C
t_b
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Min.
- 30
- 1.2
- 30
0.5
Typ.
Max.
Unit
- 22
4.1
0.0042
0.0076
60
- 2.5
± 100
-1
-5
0.0052
0.0095
V
mV/°C
V
nA
µA
A

S
5125
615
pF
554
90
135
43.1
65
nC
13.6
28.8
2.4
4.8

15
30
12
24
58
110
12
24
ns
60
120
60
120
52
100
26
52
- 50
A
- 300
- 0.74 - 1.20
V
23
46
ns
12
24
nC
9
ns
14
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 62839
2
S13-1158-Rev. A, 13-May-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000