SI6993DQ Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

New Product
Si6993DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
2000
Capacitance
0.08
1600
0.06
0.04
0.02
V_GS = 4.5 V
V_GS = 10 V
0.00
0
5
10
15
20
25
30
I_D - Drain Current (A)
Gate Charge
6
V_DS = 15 V
5
I_D = 4.7 A
4
3
2
1
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
T_J = 25_C
1
1200
C_iss
800
400
C_oss
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.60
1.40
V_GS = 10 V
I_D = 4.7 A
1.20
1.00
0.80
0.60
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.15
0.12
I_D = 4.7 A
0.09
0.06
0.03
0.1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Document Number: 72369
S-31912—Rev. A, 15-Sep-03
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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