SI6993DQ Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 30-V (D-S) MOSFET

New Product
Si6993DQ
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.031 @ V_GS = - 10 V
- 30
0.048 @ V_GS = - 4.5 V
I_D (A)
- 4.7
- 3.8
FEATURES
D TrenchFETr Power MOSFETS
APPLICATIONS
D Load Switch
D Battery Switch
TSSOP-8
D₁ 1 _D
S_{1 2}
S_{1 3}
G_{1 4}
8 D2
7 ^S2
6 ^S2
5 ^G2
Top View
Ordering Information: Si6993DQ -T1
S₁
G₁
S₂
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
- 30
"20
- 4.7
- 3.6
- 3.8
- 3.2
- 30
- 1.0
- 0.70
1.14
0.83
0.73
0.53
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72369
S-31912—Rev. A, 15-Sep-03
Symbol
R_thJA
R_thJF
Typical
86
124
52
Maximum
110
150
65
Unit
_C/W
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