SI6983DQ Datasheet, PDF (3/6 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

New Product
Si6983DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C unless noted
0.10
0.08
0.06
0.04
V_GS = 1.8 V
V_GS = 2.5 V
0.02
0.00
0
V_GS = 4.5 V
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
3500
3000
2500
C_iss
2000
1500
1000
C_oss
500
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
6
V_DS = 10 V
5
I_D = 5.4 A
4
3
2
1
1.60
1.40
V_GS = 4.5 V
I_D = 5.4 A
1.20
1.00
0.80
0
0
100
5
10
15
20
25
30
Q_g - Total Gate Charge (nC)
Gate Charge
10
T_J = 150 °C
1
T_J = 25 °C
0.1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.60
- 50 - 25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.08
0.07
0.06
0.05
I_D = 5.4 A
0.04
0.03
0.02
0.01
0.00
012345678
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72367
S-60774-Rev. C, 08-May-06
www.vishay.com
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