SI6983DQ Datasheet, PDF (1/6 Pages) Vishay Siliconix – Dual P-Channel 20-V (D-S) MOSFET

New Product
Dual P-Channel 20-V (D-S) MOSFET
Si6983DQ
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.024 at V_GS = - 4.5 V
- 20
0.030 at V_GS = - 2.5 V
0.042 at V_GS = - 1.8 V
I_D (A)
- 5.4
- 4.8
- 4.0
FEATURES
• TrenchFET^® Power MOSFET
APPLICATIONS
• Load Switch
• Battery Switch
Pb-free
Available
RoHS*
COMPLIANT
D₁ 1
S_{1 2}
S_{1 3}
G_{1 4}
TSSOP-8
Top View
8 D2
7 ^S2
6 ^S2
5 ^G2
Ordering Information: Si6983DQ-T1
Si6983DQ-T1-E3 (Lead (Pb)-free)
S₁
G₁
S₂
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 sec
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 20
V
V_GS
±8
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
- 5.4
- 4.3
- 4.6
- 3.7
A
Pulsed Drain Current (10 µs Pulse Width)
I_DM
- 30
Continuous Source Current (Diode Conduction)^a
I_S
- 1.0
- 0.7
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
1.14
0.83
0.73
0.53
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 Board.
t ≤ 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72367
S-60774-Rev. C, 08-May-06
Typical
86
124
52
Maximum
110
150
65
Unit
°C/W
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