SI6975DQ Datasheet, PDF (3/4 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

New Product
Si6975DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
4000
0.08
3200
Capacitance
C_iss
0.06
0.04
V_GS = 1.8 V
V_GS = 2.5 V
0.02
V_GS = 4.5 V
0.00
0
5
10
15
20
25
30
I_D – Drain Current (A)
5
V_DS = 6 V
I_D = 5.1 A
4
Gate Charge
2400
1600
C_oss
800
C_rss
0
0
2
4
6
8
10
12
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.60
1.40
V_GS = 4.5 V
I_D = 5.1 A
3
1.20
2
1.00
1
0.80
0
0
5
10
15
20
25
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
T_J = 25_C
0.60
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
I_D = 5.1 A
0.04
0.02
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD – Source-to-Drain Voltage (V)
Document Number: 71319
S-02318—Rev. A, 23-Oct-00
0.00
0
2
4
6
8
V_GS – Gate-to-Source Voltage (V)
www.vishay.com
3