SI6975DQ Datasheet, PDF (1/4 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

New Product
Si6975DQ
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.027 @ V_GS = –4.5 V
–12
0.035 @ V_GS = –2.5 V
0.046 @ V_GS = –1.8 V
I_D (A)
–5.1
–4.5
–3.9
S₁
S₂
TSSOP-8
D₁ 1 _D
S_{1 2}
Si6975DQ
S_{1 3}
G_{1 4}
Top View
8 D2
7 ^S2
6 ^S2
5 ^G2
G₁
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
–12
"8
–5.1
–4.3
–4.1
–3.5
–30
–1.0
–0.7
1.14
0.83
0.73
0.53
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 71319
S-02318—Rev. A, 23-Oct-00
Symbol
R_thJA
R_thJF
Typical
86
124
52
Maximum
110
150
65
Unit
_C/W
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