SI6968BEDQ_08 Datasheet, PDF (3/11 Pages) Vishay Siliconix – Dual N-Channel 2.5-V (G-S) MOSFET Common Drain, ESD Protection

Si6968BEDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
30
V_GS = 5 thru 3 V
25
2.5 V
25
20
20
15
15
10
5
2V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
10
T_C = 125 °C
5
25 °C
- 55 °C
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.06
0.05
5
V_DS = 10 V
4
I_D = 6.5 A
0.04
3
0.03
2
V_GS = 2.5 V
0.02
V_GS = 4.5 V
1
0.01
0
5
10
15
20
25
30
I_D - Drain Current (A)
On-Resistance vs. Drain Current
1.6
V_GS = 4.5 V
1.4
I_D = 6.5 A
1.2
1.0
0.8
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
40
10
T_J = 150 °C
1
T_J = 25 °C
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72274
S-81221-Rev. C, 02-Jun-08
0.1
0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
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3